SI1016X-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1016X-T1-GE3 is a SI1016X-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 700mΩ@600mA,4.5V 250mW 1V@250uA 1PCSNChannel+1PCSPChannel SOT-563 MOSFETs ROHS. This product comes in a SOT-563 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 485mA;370mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 700mΩ@600mA,4.5V
  • Power Dissipation (Pd): 250mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.052 grams.

More on SI1016X-T1-GE3

Full Specifications of SI1016X-T1-GE3

Model NumberSI1016X-T1-GE3
Model NameVishay Intertech SI1016X-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 700mΩ@600mA,4.5V 250mW 1V@250uA 1PCSNChannel+1PCSPChannel SOT-563 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.052 grams / 0.001834 oz
Package / CaseSOT-563
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)485mA;370mA
Drain Source On Resistance (RDS(on)@Vgs,Id)700mΩ@600mA,4.5V
Power Dissipation (Pd)250mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI1016X-T1-GE3 With Other 200 Models

Related Models - SI1016X-T1-GE3 Alternative

Scroll to Top