SI1025X-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1025X-T1-GE3 is a SI1025X-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 190mA 4Ω@500mA,10V 250mW 3V@250uA 2 P-Channel SC-89-6 MOSFETs ROHS. This product comes in a SC-89-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 190mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4Ω@500mA,10V
  • Power Dissipation (Pd): 250mW
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 P-Channel
  • Input Capacitance (Ciss@Vds): 23pF@25V
  • Total Gate Charge (Qg@Vgs): 1.7nC@15V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.039 grams.

More on SI1025X-T1-GE3

Full Specifications of SI1025X-T1-GE3

Model NumberSI1025X-T1-GE3
Model NameVishay Intertech SI1025X-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 190mA 4Ω@500mA,10V 250mW 3V@250uA 2 P-Channel SC-89-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.039 grams / 0.001376 oz
Package / CaseSC-89-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)190mA
Drain Source On Resistance (RDS(on)@Vgs,Id)4Ω@500mA,10V
Power Dissipation (Pd)250mW
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 P-Channel
Input Capacitance (Ciss@Vds)23pF@25V
Total Gate Charge (Qg@Vgs)1.7nC@15V
Operating Temperature-55℃~+150℃@(Tj)

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