SI1029X-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1029X-T1-GE3 is a SI1029X-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 1.4Ω@500mA,10V 250mW 2.5V@250uA 1PCSNChannel+1PCSPChannel SC-89-6 MOSFETs ROHS. This product comes in a SC-89-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 305mA;190mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@500mA,10V
  • Power Dissipation (Pd): 250mW
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 30pF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.

Full Specifications of SI1029X-T1-GE3

Model NumberSI1029X-T1-GE3
Model NameVishay Intertech SI1029X-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 1.4Ω@500mA,10V 250mW 2.5V@250uA 1PCSNChannel+1PCSPChannel SC-89-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.120 grams / 0.004233 oz
Package / CaseSC-89-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)305mA;190mA
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@500mA,10V
Power Dissipation (Pd)250mW
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)30pF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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