SI1062X-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1062X-T1-GE3 is a SI1062X-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 530mA 220mW 420mΩ@4.5V,500mA 1V@250uA 1PCSNChannel SC-89 MOSFETs ROHS. This product comes in a SC-89 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 530mA
  • Power Dissipation (Pd): 220mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 420mΩ@4.5V,500mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 43pF@10V
  • Total Gate Charge (Qg@Vgs): 2.7nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.

More on SI1062X-T1-GE3

Full Specifications of SI1062X-T1-GE3

Model NumberSI1062X-T1-GE3
Model NameVishay Intertech SI1062X-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 530mA 220mW 420mΩ@4.5V,500mA 1V@250uA 1PCSNChannel SC-89 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.110 grams / 0.00388 oz
Package / CaseSC-89
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)530mA
Power Dissipation (Pd)220mW
Drain Source On Resistance (RDS(on)@Vgs,Id)420mΩ@4.5V,500mA
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)43pF@10V
Total Gate Charge (Qg@Vgs)2.7nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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