SI1070X-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1070X-T1-GE3 is a SI1070X-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 1.2A 99mΩ@1.2A,4.5V 236mW 1.55V@250uA 1PCSNChannel SC-89-6 MOSFETs ROHS. This product comes in a SC-89-6 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 1.2A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 99mΩ@1.2A,4.5V
• Power Dissipation (Pd): 236mW
• Gate Threshold Voltage (Vgs(th)@Id): 1.55V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 385pF@15V
• Total Gate Charge (Qg@Vgs): 8.3nC@5V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.