SI1077X-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1077X-T1-GE3 is a SI1077X-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 1.75A 78mΩ@4.5V,1.8A 330mW 1V@250uA 1PCSPChannel SC-89-6 MOSFETs ROHS. This product comes in a SC-89-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 1.75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 78mΩ@4.5V,1.8A
  • Power Dissipation (Pd): 330mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 965pF@10V
  • Total Gate Charge (Qg@Vgs): 31.1nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.12 grams.

More on SI1077X-T1-GE3

Full Specifications of SI1077X-T1-GE3

Model NumberSI1077X-T1-GE3
Model NameVishay Intertech SI1077X-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 1.75A 78mΩ@4.5V,1.8A 330mW 1V@250uA 1PCSPChannel SC-89-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.120 grams / 0.004233 oz
Package / CaseSC-89-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)1.75A
Drain Source On Resistance (RDS(on)@Vgs,Id)78mΩ@4.5V,1.8A
Power Dissipation (Pd)330mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)965pF@10V
Total Gate Charge (Qg@Vgs)31.1nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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