SI1302DL-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1302DL-T1-GE3 is a SI1302DL-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 600mA 480mΩ@600mA,10V 280mW 3V@250uA 1PCSNChannel SC-70-3 MOSFETs ROHS. This product comes in a SC-70-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 600mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 480mΩ@600mA,10V
  • Power Dissipation (Pd): 280mW
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 1.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.029 grams.

More on SI1302DL-T1-GE3

Full Specifications of SI1302DL-T1-GE3

Model NumberSI1302DL-T1-GE3
Model NameVishay Intertech SI1302DL-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 600mA 480mΩ@600mA,10V 280mW 3V@250uA 1PCSNChannel SC-70-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.029 grams / 0.001023 oz
Package / CaseSC-70-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)600mA
Drain Source On Resistance (RDS(on)@Vgs,Id)480mΩ@600mA,10V
Power Dissipation (Pd)280mW
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)1.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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