SI1308EDL-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1308EDL-T1-GE3 is a SI1308EDL-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 1.4A 132mΩ@10V,1.4A 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS. This product comes in a SOT-323 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 1.4A
  • Power Dissipation (Pd): 400mW;500mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 132mΩ@10V,1.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 105pF@15V
  • Total Gate Charge (Qg@Vgs): 4.1nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.008 grams.

More on SI1308EDL-T1-GE3

Full Specifications of SI1308EDL-T1-GE3

Model NumberSI1308EDL-T1-GE3
Model NameVishay Intertech SI1308EDL-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 1.4A 132mΩ@10V,1.4A 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.008 grams / 0.000282 oz
Package / CaseSOT-323
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)1.4A
Power Dissipation (Pd)400mW;500mW
Drain Source On Resistance (RDS(on)@Vgs,Id)132mΩ@10V,1.4A
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)105pF@15V
Total Gate Charge (Qg@Vgs)4.1nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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