SI1401EDH-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1401EDH-T1-GE3 is a SI1401EDH-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 4A 34mΩ@4.5V,5.5A 1V@250uA 1PCSPChannel SC-70-6(SOT-363) MOSFETs ROHS. This product comes in a SC-70-6(SOT-363) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 34mΩ@4.5V,5.5A
  • Power Dissipation (Pd): 1.6W;2.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Total Gate Charge (Qg@Vgs): 36nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.039 grams.

More on SI1401EDH-T1-GE3

Full Specifications of SI1401EDH-T1-GE3

Model NumberSI1401EDH-T1-GE3
Model NameVishay Intertech SI1401EDH-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 4A 34mΩ@4.5V,5.5A 1V@250uA 1PCSPChannel SC-70-6(SOT-363) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.039 grams / 0.001376 oz
Package / CaseSC-70-6(SOT-363)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)34mΩ@4.5V,5.5A
Power Dissipation (Pd)1.6W;2.8W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel
Total Gate Charge (Qg@Vgs)36nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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