SI1416EDH-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1416EDH-T1-GE3 is a SI1416EDH-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 3.9A 58mΩ@10V,3.1A 2.8W 1.4V@250uA 1PCSNChannel SC-70-6(SOT-363) MOSFETs ROHS. This product comes in a SC-70-6(SOT-363) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 3.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 58mΩ@10V,3.1A
  • Power Dissipation (Pd): 2.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.05 grams.

More on SI1416EDH-T1-GE3

Full Specifications of SI1416EDH-T1-GE3

Model NumberSI1416EDH-T1-GE3
Model NameVishay Intertech SI1416EDH-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 3.9A 58mΩ@10V,3.1A 2.8W 1.4V@250uA 1PCSNChannel SC-70-6(SOT-363) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.050 grams / 0.001764 oz
Package / CaseSC-70-6(SOT-363)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)3.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)58mΩ@10V,3.1A
Power Dissipation (Pd)2.8W
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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