SI1424EDH-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1424EDH-T1-GE3 is a SI1424EDH-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 4A 33mΩ@5A,4.5V 1V@250uA 1PCSNChannel SOT-363 MOSFETs ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@5A,4.5V
  • Power Dissipation (Pd): 1.56W;2.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 18nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.017 grams.

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Full Specifications of SI1424EDH-T1-GE3

Model NumberSI1424EDH-T1-GE3
Model NameVishay Intertech SI1424EDH-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 4A 33mΩ@5A,4.5V 1V@250uA 1PCSNChannel SOT-363 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.017 grams / 0.0006 oz
Package / CaseSOT-363
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@5A,4.5V
Power Dissipation (Pd)1.56W;2.8W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)18nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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