SI1442DH-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1442DH-T1-GE3 is a SI1442DH-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 4A 20mΩ@6A,4.5V 1V@250uA 1PCSNChannel SOT-363-6 MOSFETs ROHS. This product comes in a SOT-363-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@6A,4.5V
  • Power Dissipation (Pd): 1.56W;2.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.01nF@6V
  • Total Gate Charge (Qg@Vgs): 33nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.024 grams.

More on SI1442DH-T1-GE3

Full Specifications of SI1442DH-T1-GE3

Model NumberSI1442DH-T1-GE3
Model NameVishay Intertech SI1442DH-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 4A 20mΩ@6A,4.5V 1V@250uA 1PCSNChannel SOT-363-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.024 grams / 0.000847 oz
Package / CaseSOT-363-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@6A,4.5V
Power Dissipation (Pd)1.56W;2.8W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.01nF@6V
Total Gate Charge (Qg@Vgs)33nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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