SI1539CDL-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1539CDL-T1-GE3 is a SI1539CDL-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 388mΩ@600mA,10V 340mW 2.5V@250uA 1PCSNChannel+1PCSPChannel SC-70-6(SOT-363) MOSFETs ROHS. This product comes in a SC-70-6(SOT-363) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 700mA;500mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 388mΩ@600mA,10V
  • Power Dissipation (Pd): 340mW
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 28pF@15V
  • Total Gate Charge (Qg@Vgs): 1.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.05 grams.

Full Specifications of SI1539CDL-T1-GE3

Model NumberSI1539CDL-T1-GE3
Model NameVishay Intertech SI1539CDL-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 388mΩ@600mA,10V 340mW 2.5V@250uA 1PCSNChannel+1PCSPChannel SC-70-6(SOT-363) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.050 grams / 0.001764 oz
Package / CaseSC-70-6(SOT-363)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)700mA;500mA
Drain Source On Resistance (RDS(on)@Vgs,Id)388mΩ@600mA,10V
Power Dissipation (Pd)340mW
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)28pF@15V
Total Gate Charge (Qg@Vgs)1.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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