SI1900DL-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI1900DL-T1-E3 is a SI1900DL-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 590mA 270mW 480mΩ@10V,590mA 3V@250uA 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS. This product comes in a SC-70-6(SOT-363) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 590mA
  • Power Dissipation (Pd): 270mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 480mΩ@10V,590mA
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 N-Channel
  • Total Gate Charge (Qg@Vgs): 1.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.018 grams.

Full Specifications of SI1900DL-T1-E3

Model NumberSI1900DL-T1-E3
Model NameVishay Intertech SI1900DL-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 590mA 270mW 480mΩ@10V,590mA 3V@250uA 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.018 grams / 0.000635 oz
Package / CaseSC-70-6(SOT-363)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)590mA
Power Dissipation (Pd)270mW
Drain Source On Resistance (RDS(on)@Vgs,Id)480mΩ@10V,590mA
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 N-Channel
Total Gate Charge (Qg@Vgs)1.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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