Vishay Intertech SI1902CDL-T1-GE3 is a SI1902CDL-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 1.1A 420mW 235mΩ@4.5V,1A 1.5V@250uA 2 N-Channel SC-70-6 MOSFETs ROHS. This product comes in a SC-70-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 1.1A
- Power Dissipation (Pd): 420mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 235mΩ@4.5V,1A
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 62pF@10V
- Total Gate Charge (Qg@Vgs): 3nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.041 grams.
More on SI1902CDL-T1-GE3
Full Specifications of SI1902CDL-T1-GE3
Model Number | SI1902CDL-T1-GE3 |
Model Name | Vishay Intertech SI1902CDL-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 20V 1.1A 420mW 235mΩ@4.5V,1A 1.5V@250uA 2 N-Channel SC-70-6 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.041 grams / 0.001446 oz |
Package / Case | SC-70-6 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 1.1A |
Power Dissipation (Pd) | 420mW |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 235mΩ@4.5V,1A |
Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
Type | 2 N-Channel |
Input Capacitance (Ciss@Vds) | 62pF@10V |
Total Gate Charge (Qg@Vgs) | 3nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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