SI1902DL-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1902DL-T1-GE3 is a SI1902DL-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 660mA 385mΩ@660mA,4.5V 270mW 1.5V@250uA 2 N-Channel SOT-363-6 MOSFETs ROHS. This product comes in a SOT-363-6 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 660mA
• Drain Source On Resistance (RDS(on)@Vgs,Id): 385mΩ@660mA,4.5V
• Power Dissipation (Pd): 270mW
• Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
• Type: 2 N-Channel
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.