SI1922EDH-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1922EDH-T1-GE3 is a SI1922EDH-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 1.3A 1.25W 198mΩ@4.5V,1A 1V@250uA 2 N-Channel SC-70-6(SOT-363) MOSFETs ROHS. This product comes in a SC-70-6(SOT-363) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 1.3A
• Power Dissipation (Pd): 1.25W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 198mΩ@4.5V,1A
• Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
• Type: 2 N-Channel
• Total Gate Charge (Qg@Vgs): 2.5nC@8V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.05 grams.