SI1926DL-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI1926DL-T1-E3 is a SI1926DL-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 370mA 1.4Ω@340mA,10V 510mW 2.5V@250uA 2 N-Channel SOT-363-6 MOSFETs ROHS. This product comes in a SOT-363-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 370mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@340mA,10V
  • Power Dissipation (Pd): 510mW
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 18.5pF@30V
  • Total Gate Charge (Qg@Vgs): 1.4nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.037 grams.

More on SI1926DL-T1-E3

Full Specifications of SI1926DL-T1-E3

Model NumberSI1926DL-T1-E3
Model NameVishay Intertech SI1926DL-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description60V 370mA 1.4Ω@340mA,10V 510mW 2.5V@250uA 2 N-Channel SOT-363-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.037 grams / 0.001305 oz
Package / CaseSOT-363-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)370mA
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4Ω@340mA,10V
Power Dissipation (Pd)510mW
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)18.5pF@30V
Total Gate Charge (Qg@Vgs)1.4nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI1926DL-T1-E3 With Other 200 Models

Related Models - SI1926DL-T1-E3 Alternative

Scroll to Top