SI1926DL-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1926DL-T1-GE3 is a SI1926DL-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 370mA 1.4Ω@340mA,10V 510mW 2.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 370mA
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@340mA,10V
• Power Dissipation (Pd): 510mW
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 18.5pF@30V
• Total Gate Charge (Qg@Vgs): 1.4nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.