SI1965DH-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1965DH-T1-GE3 is a SI1965DH-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 1.3A 390mΩ@1A,4.5V 1.25W 1V@250uA 2 P-Channel SOT-363 MOSFETs ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 12V
• Continuous Drain Current (Id): 1.3A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 390mΩ@1A,4.5V
• Power Dissipation (Pd): 1.25W
• Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
• Type: 2 P-Channel
• Input Capacitance (Ciss@Vds): 120pF@6V
• Total Gate Charge (Qg@Vgs): 4.2nC@8V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.