SI1967DH-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1967DH-T1-GE3 is a SI1967DH-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 1.3A 1.25W 790mΩ@1.8V,250mA 1V@250uA 2 P-Channel SOT-363 MOSFETs ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 1.3A
• Power Dissipation (Pd): 1.25W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 790mΩ@1.8V,250mA
• Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
• Type: 2 P-Channel
• Input Capacitance (Ciss@Vds): 110pF@10V
• Total Gate Charge (Qg@Vgs): 4nC@8V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.04 grams.