SI2301BDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2301BDS-T1-GE3 is a SI2301BDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 2.2A 100mΩ@2.8A,4.5V 700mW 950mV@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@2.8A,4.5V
  • Power Dissipation (Pd): 700mW
  • Gate Threshold Voltage (Vgs(th)@Id): 950mV@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 375pF@6V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

More on SI2301BDS-T1-GE3

Full Specifications of SI2301BDS-T1-GE3

Model NumberSI2301BDS-T1-GE3
Model NameVishay Intertech SI2301BDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 2.2A 100mΩ@2.8A,4.5V 700mW 950mV@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)2.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)100mΩ@2.8A,4.5V
Power Dissipation (Pd)700mW
Gate Threshold Voltage (Vgs(th)@Id)950mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)375pF@6V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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