SI2302DDS-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI2302DDS-T1-BE3 is a SI2302DDS-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 2.6A 57mΩ@3.6A,4.5V 710mW 850mV@250uA 1PCSNChannel SOT-23(TO-236) MOSFETs ROHS. This product comes in a SOT-23(TO-236) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 57mΩ@3.6A,4.5V
  • Power Dissipation (Pd): 710mW
  • Gate Threshold Voltage (Vgs(th)@Id): 850mV@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SI2302DDS-T1-BE3

Model NumberSI2302DDS-T1-BE3
Model NameVishay Intertech SI2302DDS-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 2.6A 57mΩ@3.6A,4.5V 710mW 850mV@250uA 1PCSNChannel SOT-23(TO-236) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-23(TO-236)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)2.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)57mΩ@3.6A,4.5V
Power Dissipation (Pd)710mW
Gate Threshold Voltage (Vgs(th)@Id)850mV@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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