Si2308BDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech Si2308BDS-T1-GE3 is a Si2308BDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 2.3A 156mΩ@10V,1.9A 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 2.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 156mΩ@10V,1.9A
  • Power Dissipation (Pd): 1.09W;1.66W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 190pF@30V
  • Total Gate Charge (Qg@Vgs): 6.8nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

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Full Specifications of Si2308BDS-T1-GE3

Model NumberSi2308BDS-T1-GE3
Model NameVishay Intertech Si2308BDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 2.3A 156mΩ@10V,1.9A 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)2.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)156mΩ@10V,1.9A
Power Dissipation (Pd)1.09W;1.66W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)190pF@30V
Total Gate Charge (Qg@Vgs)6.8nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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