Vishay Intertech SI2308CDS-T1-GE3 is a SI2308CDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 2.6A 144mΩ@1.9A,10V 1.6W 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 2.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 144mΩ@1.9A,10V
- Power Dissipation (Pd): 1.6W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 105pF@30V
- Total Gate Charge (Qg@Vgs): 4nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.038 grams.
More on SI2308CDS-T1-GE3
Full Specifications of SI2308CDS-T1-GE3
Model Number | SI2308CDS-T1-GE3 |
Model Name | Vishay Intertech SI2308CDS-T1-GE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 60V 2.6A 144mΩ@1.9A,10V 1.6W 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.038 grams / 0.00134 oz |
Package / Case | SOT-23-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 2.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 144mΩ@1.9A,10V |
Power Dissipation (Pd) | 1.6W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 105pF@30V |
Total Gate Charge (Qg@Vgs) | 4nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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