SI2309CDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2309CDS-T1-GE3 is a SI2309CDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 1.6A 345mΩ@10V,1.25A 3V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 1.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 345mΩ@10V,1.25A
  • Power Dissipation (Pd): 1W;1.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 210pF@30V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.106 grams.

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Full Specifications of SI2309CDS-T1-GE3

Model NumberSI2309CDS-T1-GE3
Model NameVishay Intertech SI2309CDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 1.6A 345mΩ@10V,1.25A 3V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.106 grams / 0.003739 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)1.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)345mΩ@10V,1.25A
Power Dissipation (Pd)1W;1.7W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)210pF@30V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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