SI2312BDS-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI2312BDS-T1-E3 is a SI2312BDS-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 3.9A 750mW 31mΩ@4.5V,5A 850mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 3.9A
• Power Dissipation (Pd): 750mW
• Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@4.5V,5A
• Gate Threshold Voltage (Vgs(th)@Id): 850mV@250uA
• Type: 1PCSNChannel
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.