SI2312BDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2312BDS-T1-GE3 is a SI2312BDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 3.9A 750mW 31mΩ@4.5V,5A 850mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.9A
  • Power Dissipation (Pd): 750mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@4.5V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 850mV@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SI2312BDS-T1-GE3

Full Specifications of SI2312BDS-T1-GE3

Model NumberSI2312BDS-T1-GE3
Model NameVishay Intertech SI2312BDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 3.9A 750mW 31mΩ@4.5V,5A 850mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)3.9A
Power Dissipation (Pd)750mW
Drain Source On Resistance (RDS(on)@Vgs,Id)31mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)@Id)850mV@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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