Vishay Intertech SI2314EDS-T1-E3 is a SI2314EDS-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 3.77A 750mW 33mΩ@4.5V,5A 950mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 3.77A
- Power Dissipation (Pd): 750mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@4.5V,5A
- Gate Threshold Voltage (Vgs(th)@Id): 950mV@250uA
- Type: 1PCSNChannel
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.
More on SI2314EDS-T1-E3
Full Specifications of SI2314EDS-T1-E3
Model Number | SI2314EDS-T1-E3 |
Model Name | Vishay Intertech SI2314EDS-T1-E3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 20V 3.77A 750mW 33mΩ@4.5V,5A 950mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.035 grams / 0.001235 oz |
Package / Case | SOT-23 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 3.77A |
Power Dissipation (Pd) | 750mW |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 33mΩ@4.5V,5A |
Gate Threshold Voltage (Vgs(th)@Id) | 950mV@250uA |
Type | 1PCSNChannel |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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