SI2314EDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2314EDS-T1-GE3 is a SI2314EDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 3.77A 33mΩ@5A,4.5V 750mW 950mV@250uA 1PCSNChannel TO-236-3 MOSFETs ROHS. This product comes in a TO-236-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.77A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@5A,4.5V
  • Power Dissipation (Pd): 750mW
  • Gate Threshold Voltage (Vgs(th)@Id): 950mV@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SI2314EDS-T1-GE3

Model NumberSI2314EDS-T1-GE3
Model NameVishay Intertech SI2314EDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 3.77A 33mΩ@5A,4.5V 750mW 950mV@250uA 1PCSNChannel TO-236-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-236-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)3.77A
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@5A,4.5V
Power Dissipation (Pd)750mW
Gate Threshold Voltage (Vgs(th)@Id)950mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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