SI2315BDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2315BDS-T1-GE3 is a SI2315BDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 3A 50mΩ@3.85A,4.5V 750mW 900mV@250uA 1PCSPChannel TO-236-3 MOSFETs ROHS. This product comes in a TO-236-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@3.85A,4.5V
  • Power Dissipation (Pd): 750mW
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 715pF@6V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI2315BDS-T1-GE3

Full Specifications of SI2315BDS-T1-GE3

Model NumberSI2315BDS-T1-GE3
Model NameVishay Intertech SI2315BDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 3A 50mΩ@3.85A,4.5V 750mW 900mV@250uA 1PCSPChannel TO-236-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-236-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)3A
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@3.85A,4.5V
Power Dissipation (Pd)750mW
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)715pF@6V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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