SI2316BDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2316BDS-T1-GE3 is a SI2316BDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 4.5A 50mΩ@10V,3.9A 3V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.5A
  • Power Dissipation (Pd): 1.25W;1.66W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,3.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 350pF@15V
  • Total Gate Charge (Qg@Vgs): 9.6nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SI2316BDS-T1-GE3

Full Specifications of SI2316BDS-T1-GE3

Model NumberSI2316BDS-T1-GE3
Model NameVishay Intertech SI2316BDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 4.5A 50mΩ@10V,3.9A 3V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.5A
Power Dissipation (Pd)1.25W;1.66W
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@10V,3.9A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)350pF@15V
Total Gate Charge (Qg@Vgs)9.6nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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