SI2316DS-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI2316DS-T1-E3 is a SI2316DS-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 2.9A 50mΩ@10V,3.4A 700mW 800mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 2.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@10V,3.4A
  • Power Dissipation (Pd): 700mW
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 215pF@15V
  • Total Gate Charge (Qg@Vgs): 7nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SI2316DS-T1-E3

Full Specifications of SI2316DS-T1-E3

Model NumberSI2316DS-T1-E3
Model NameVishay Intertech SI2316DS-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 2.9A 50mΩ@10V,3.4A 700mW 800mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)2.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@10V,3.4A
Power Dissipation (Pd)700mW
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)215pF@15V
Total Gate Charge (Qg@Vgs)7nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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