SI2316DS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2316DS-T1-GE3 is a SI2316DS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 2.9A 50mΩ@3.4A,10V 700mW 800mV@250uA 1PCSNChannel TO-236-3 MOSFETs ROHS. This product comes in a TO-236-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 2.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@3.4A,10V
  • Power Dissipation (Pd): 700mW
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 215pF@15V
  • Total Gate Charge (Qg@Vgs): 7nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI2316DS-T1-GE3

Full Specifications of SI2316DS-T1-GE3

Model NumberSI2316DS-T1-GE3
Model NameVishay Intertech SI2316DS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 2.9A 50mΩ@3.4A,10V 700mW 800mV@250uA 1PCSNChannel TO-236-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-236-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)2.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@3.4A,10V
Power Dissipation (Pd)700mW
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)215pF@15V
Total Gate Charge (Qg@Vgs)7nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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