SI2319DDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2319DDS-T1-GE3 is a SI2319DDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 75mΩ@2.7A,10V 2.5V@250uA 1PCSPChannel SOT-23-3(TO-236-3) MOSFETs ROHS. This product comes in a SOT-23-3(TO-236-3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 2.7A;3.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@2.7A,10V
  • Power Dissipation (Pd): 1W;1.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 650pF@20V
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.039 grams.

More on SI2319DDS-T1-GE3

Full Specifications of SI2319DDS-T1-GE3

Model NumberSI2319DDS-T1-GE3
Model NameVishay Intertech SI2319DDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 75mΩ@2.7A,10V 2.5V@250uA 1PCSPChannel SOT-23-3(TO-236-3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.039 grams / 0.001376 oz
Package / CaseSOT-23-3(TO-236-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)2.7A;3.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)75mΩ@2.7A,10V
Power Dissipation (Pd)1W;1.7W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)650pF@20V
Total Gate Charge (Qg@Vgs)19nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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