SI2319DS-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI2319DS-T1-BE3 is a SI2319DS-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 2.3A 750mW 82mΩ@3A,10V 3V@250uA 1PCSPChannel SOT-23(TO-236) MOSFETs ROHS. This product comes in a SOT-23(TO-236) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 2.3A
• Power Dissipation (Pd): 750mW
• Drain Source On Resistance (RDS(on)@Vgs,Id): 82mΩ@3A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Type: 1PCSPChannel
• Input Capacitance (Ciss@Vds): 470pF@20V
• Total Gate Charge (Qg@Vgs): 17nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.