SI2319DS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2319DS-T1-GE3 is a SI2319DS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 2.3A 82mΩ@3A,10V 750mW 3V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 2.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 82mΩ@3A,10V
  • Power Dissipation (Pd): 750mW
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 470pF@20V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.039 grams.

More on SI2319DS-T1-GE3

Full Specifications of SI2319DS-T1-GE3

Model NumberSI2319DS-T1-GE3
Model NameVishay Intertech SI2319DS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 2.3A 82mΩ@3A,10V 750mW 3V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.039 grams / 0.001376 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)2.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)82mΩ@3A,10V
Power Dissipation (Pd)750mW
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)470pF@20V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Vishay Intertech - SI2319DS-T1-GE3 With Other 200 Models

Related Models - SI2319DS-T1-GE3 Alternative

Scroll to Top