Si2323DDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech Si2323DDS-T1-GE3 is a Si2323DDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 5.3A 39mΩ@4.5V,4.1A 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 5.3A
  • Power Dissipation (Pd): 960mW;1.7W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 39mΩ@4.5V,4.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.16nF@10V
  • Total Gate Charge (Qg@Vgs): 36nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.05 grams.

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Full Specifications of Si2323DDS-T1-GE3

Model NumberSi2323DDS-T1-GE3
Model NameVishay Intertech Si2323DDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 5.3A 39mΩ@4.5V,4.1A 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.050 grams / 0.001764 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)5.3A
Power Dissipation (Pd)960mW;1.7W
Drain Source On Resistance (RDS(on)@Vgs,Id)39mΩ@4.5V,4.1A
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.16nF@10V
Total Gate Charge (Qg@Vgs)36nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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