SI2323DS-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI2323DS-T1-E3 is a SI2323DS-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 3.7A 39mΩ@4.5V,4.7A 750mW 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 39mΩ@4.5V,4.7A
  • Power Dissipation (Pd): 750mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.02nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.039 grams.

More on SI2323DS-T1-E3

Full Specifications of SI2323DS-T1-E3

Model NumberSI2323DS-T1-E3
Model NameVishay Intertech SI2323DS-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description20V 3.7A 39mΩ@4.5V,4.7A 750mW 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.039 grams / 0.001376 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)3.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)39mΩ@4.5V,4.7A
Power Dissipation (Pd)750mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.02nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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