SI2325DS-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI2325DS-T1-BE3 is a SI2325DS-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 530mA 1.2Ω@500mA,10V 750mW 4.5V@250uA 1PCSPChannel SOT-23(TO-236) MOSFETs ROHS. This product comes in a SOT-23(TO-236) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 530mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@500mA,10V
  • Power Dissipation (Pd): 750mW
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 510pF@25V
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SI2325DS-T1-BE3

Model NumberSI2325DS-T1-BE3
Model NameVishay Intertech SI2325DS-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 530mA 1.2Ω@500mA,10V 750mW 4.5V@250uA 1PCSPChannel SOT-23(TO-236) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-23(TO-236)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)530mA
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2Ω@500mA,10V
Power Dissipation (Pd)750mW
Gate Threshold Voltage (Vgs(th)@Id)4.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)510pF@25V
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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