SI2328DS-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI2328DS-T1-E3 is a SI2328DS-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 1.15A 250mΩ@10V,1.5A 730mW 4V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 1.15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,1.5A
  • Power Dissipation (Pd): 730mW
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): 5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SI2328DS-T1-E3

Full Specifications of SI2328DS-T1-E3

Model NumberSI2328DS-T1-E3
Model NameVishay Intertech SI2328DS-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description100V 1.15A 250mΩ@10V,1.5A 730mW 4V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)1.15A
Drain Source On Resistance (RDS(on)@Vgs,Id)250mΩ@10V,1.5A
Power Dissipation (Pd)730mW
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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