SI2329DS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2329DS-T1-GE3 is a SI2329DS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 8V 6A 2.5W 30mΩ@4.5V,5.3A 800mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 6A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@4.5V,5.3A
  • Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.485nF@4V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SI2329DS-T1-GE3

Full Specifications of SI2329DS-T1-GE3

Model NumberSI2329DS-T1-GE3
Model NameVishay Intertech SI2329DS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description8V 6A 2.5W 30mΩ@4.5V,5.3A 800mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)8V
Continuous Drain Current (Id)6A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)30mΩ@4.5V,5.3A
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.485nF@4V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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