SI2333DS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2333DS-T1-GE3 is a SI2333DS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 4.1A 32mΩ@5.3A,4.5V 750mW 1V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 4.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@5.3A,4.5V
  • Power Dissipation (Pd): 750mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.1nF@6V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.041 grams.

More on SI2333DS-T1-GE3

Full Specifications of SI2333DS-T1-GE3

Model NumberSI2333DS-T1-GE3
Model NameVishay Intertech SI2333DS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 4.1A 32mΩ@5.3A,4.5V 750mW 1V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.041 grams / 0.001446 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)4.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)32mΩ@5.3A,4.5V
Power Dissipation (Pd)750mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.1nF@6V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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