SI2336DS-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI2336DS-T1-BE3 is a SI2336DS-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 42mΩ@3.8A,4.5V 1V@250uA 1PCSNChannel SOT-23-3(TO-236-3) MOSFETs ROHS. This product comes in a SOT-23-3(TO-236-3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.3A;5.2A
  • Power Dissipation (Pd): 1.25W;1.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 42mΩ@3.8A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 560pF@15V
  • Total Gate Charge (Qg@Vgs): 15nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI2336DS-T1-BE3

Full Specifications of SI2336DS-T1-BE3

Model NumberSI2336DS-T1-BE3
Model NameVishay Intertech SI2336DS-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 42mΩ@3.8A,4.5V 1V@250uA 1PCSNChannel SOT-23-3(TO-236-3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-23-3(TO-236-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.3A;5.2A
Power Dissipation (Pd)1.25W;1.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)42mΩ@3.8A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)560pF@15V
Total Gate Charge (Qg@Vgs)15nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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