SI2337DS-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI2337DS-T1-E3 is a SI2337DS-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 2.2A 270mΩ@10V,1.2A 760mW 4V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 2.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 270mΩ@10V,1.2A
  • Power Dissipation (Pd): 760mW
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 500pF@40V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -50℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on SI2337DS-T1-E3

Full Specifications of SI2337DS-T1-E3

Model NumberSI2337DS-T1-E3
Model NameVishay Intertech SI2337DS-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description80V 2.2A 270mΩ@10V,1.2A 760mW 4V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)2.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)270mΩ@10V,1.2A
Power Dissipation (Pd)760mW
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)500pF@40V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-50℃~+150℃@(Tj)

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