SI2343DS-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech SI2343DS-T1-E3 is a SI2343DS-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 3.1A 53mΩ@10V,4A 750mW 3V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 3.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 53mΩ@10V,4A
  • Power Dissipation (Pd): 750mW
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 540pF@15V
  • Total Gate Charge (Qg@Vgs): 21nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.066 grams.

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Full Specifications of SI2343DS-T1-E3

Model NumberSI2343DS-T1-E3
Model NameVishay Intertech SI2343DS-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description30V 3.1A 53mΩ@10V,4A 750mW 3V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.066 grams / 0.002328 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)3.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)53mΩ@10V,4A
Power Dissipation (Pd)750mW
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)540pF@15V
Total Gate Charge (Qg@Vgs)21nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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