SI2356DS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2356DS-T1-GE3 is a SI2356DS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 4.3A 51mΩ@10V,3.2A 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 4.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 51mΩ@10V,3.2A
  • Power Dissipation (Pd): 960mW;1.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 370pF@20V
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.065 grams.

More on SI2356DS-T1-GE3

Full Specifications of SI2356DS-T1-GE3

Model NumberSI2356DS-T1-GE3
Model NameVishay Intertech SI2356DS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 4.3A 51mΩ@10V,3.2A 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.065 grams / 0.002293 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)4.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)51mΩ@10V,3.2A
Power Dissipation (Pd)960mW;1.7W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)370pF@20V
Total Gate Charge (Qg@Vgs)13nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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