Vishay Intertech SI2365EDS-T1-BE3 is a SI2365EDS-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 32mΩ@4A,4.5V 1V@250uA 1PCSPChannel SOT-23(TO-236) MOSFETs ROHS. This product comes in a SOT-23(TO-236) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 4.5A;5.9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@4A,4.5V
- Power Dissipation (Pd): 1W;1.7W
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1PCSPChannel
- Total Gate Charge (Qg@Vgs): 36nC@8V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SI2365EDS-T1-BE3
Full Specifications of SI2365EDS-T1-BE3
Model Number | SI2365EDS-T1-BE3 |
Model Name | Vishay Intertech SI2365EDS-T1-BE3 |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 20V 32mΩ@4A,4.5V 1V@250uA 1PCSPChannel SOT-23(TO-236) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SOT-23(TO-236) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 4.5A;5.9A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 32mΩ@4A,4.5V |
Power Dissipation (Pd) | 1W;1.7W |
Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
Type | 1PCSPChannel |
Total Gate Charge (Qg@Vgs) | 36nC@8V |
Operating Temperature | -55℃~+150℃@(Tj) |
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