SI2366DS-T1-BE3 by Vishay Intertech – Specifications

Vishay Intertech SI2366DS-T1-BE3 is a SI2366DS-T1-BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 36mΩ@4.5A,10V 2.5V@250uA 1PCSNChannel SOT-23(TO-236) MOSFETs ROHS. This product comes in a SOT-23(TO-236) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.5A;5.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@4.5A,10V
  • Power Dissipation (Pd): 1.25W;2.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 335pF@15V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SI2366DS-T1-BE3

Full Specifications of SI2366DS-T1-BE3

Model NumberSI2366DS-T1-BE3
Model NameVishay Intertech SI2366DS-T1-BE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 36mΩ@4.5A,10V 2.5V@250uA 1PCSNChannel SOT-23(TO-236) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-23(TO-236)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.5A;5.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)36mΩ@4.5A,10V
Power Dissipation (Pd)1.25W;2.1W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)335pF@15V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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