SI2369BDS-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI2369BDS-T1-GE3 is a SI2369BDS-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 30V 27mΩ@5A,10V 2.2V@250uA 1PCSPChannel TO-236-3 MOSFETs ROHS. This product comes in a TO-236-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5.6A;7.5A
  • Power Dissipation (Pd): 1.3W;2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 745pF@15V
  • Total Gate Charge (Qg@Vgs): 19.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.018 grams.

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Full Specifications of SI2369BDS-T1-GE3

Model NumberSI2369BDS-T1-GE3
Model NameVishay Intertech SI2369BDS-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description30V 27mΩ@5A,10V 2.2V@250uA 1PCSPChannel TO-236-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.018 grams / 0.000635 oz
Package / CaseTO-236-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)5.6A;7.5A
Power Dissipation (Pd)1.3W;2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)27mΩ@5A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)745pF@15V
Total Gate Charge (Qg@Vgs)19.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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